000			03696cam a22003615a 4500
999			_c48058 _d48058
001			ocm13563275
003			IE-CoIT
005			20190312112045.0
008			040419s2004 nyu 000 0 eng
010			_a2004105869
020			_a3540210814
029			_aT36006
035			_a(DLC) 2004105869
040			_aDLC _cDLC
082	0	4	_a621.3815284
245	0	0	_aHigh dielectric constant materials : _bVLSI MOSFET applications / _cedited by Howard Huff and D.C. Gilmer.
260			_aNew York, NY : _bSpringer-Verlag Berlin Heidelberg, _c2005.
300			_axxiv, 710 p. :/bill. ; _c25 cm. + _ehbk.
490		0	_aSpringer series in advanced microelectronics ; _v1437-0387
504			_aIncludes bibliographical references and index.
505	0		_aThe economic implications of Moore's law / G. D. Hutcheson -- Part I: Classical regime for SiO2 -- Brief notes on the history of gate dielectrics in MOS devices / E. Kooi, A. Schmitz -- SiO2 based MOSFETS: Film growth and Si-SiO2 interface properties / E. A. Irene -- Oxide reliability issues / R. Degraeve -- Part II: Transition to silicon oxynitrides -- Gate dielectric scaling to 2.0-1.0nm: SiO2 and silicon oxynitride / S. -H. Lo and Y. Taur -- Optimal scaling methodologies and transistor performances / T. Skotnicki, F. Boeuf -- Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation / H. -H. Tseng -- Part III: Transition to high-k gate dielectrics -- Alternative dielectrics for silicon-based transistors: selection via multiple criteria / J. -P. Maria -- Materials issues for high-k gate dielectric selection and integration / R. M. Wallace, G. D. Wilk -- Designing interface composition and structure in high dielectric constant gate stacks / G. N. Parsons -- Electronic structure of alternative high-k dielectrics / G. Lucovsky, J. L. Whitten -- Physicochemical properties of selected 4d, 5d and rare earth metals in silicon / A. A. Istratov, E. R. Weber -- High-k gate dielectric deposition technologies / J. P. Chang -- Issues in metal gate electrode selection for bulk CMOS devices / V. Misra -- CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials / L. Colombo, A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers -- Characterization and metrology of medium dielectric constant gate dielectric films / A. C. Diebold, W. W. Chism -- Electrical measurement issues for alternative gate stack systems / G. A. Brown -- High-k gate dielectric materials integrated circuit device design issues / Y. -Y. Fan, S. P. Mudanai, W. Chen, L. F. Register, S. K. Banerjee -- Part IV: Future directions for ultimate scaling technology generations -- High-k crystalline gate dielectrics: a research perpective / F. J. Walker, R. A. McKee -- High-k crystalline gate dielectrics: an IC manufacturer's perspective / R. Droopad, K. Eisenbeiser, A. A. Demkov -- Advanced MOS-devices / J. Boker, T. -J. King, J. Hergenrother, J. Bude, D. Muller, T. Skotnicki, S. Monfray, G. Timp.
650		0	_aMicroelectronics. _939932
650		0	_aIntegrated circuits _xVery large scale integration. _938656
650		0	_aMetal oxide semiconductor field-effect transistors. _939847
650		0	_aDielectrics. _936224
700	1		_aHuff, Howard. _951332
700	1		_aGilmer, D. C. _q(David C.) _951333
907			_a.b10612117 _b140509 _c050505
942			_n0 _2ddc
960			_ac _b1 _c _d _e _f _g _h _i _j165.15 _kb _ld201 _m2005-08-29 _n _o0 _p _q2005-10-07 _r _s _ta _u _v51378 _w _x _y0 _z.o1002749x
961			_aT36006 _d3000060 _fBarrett, James _bOrder printed 30-08-2005 17:26 _lc _md201
998			_ac _b050505 _cm _da _e- _feng _gnyu _h0