| 000 | 02691nam a2200301 a 4500 | ||
|---|---|---|---|
| 008 | 2016 | ||
| 082 | 0 | 4 | _aTHESES PRESS |
| 100 | 1 |
_aKomolibus, Katarzyna, _eauthor. |
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| 245 | 1 | 0 |
_aEmission properties and carrier dynamics of III-V nanostructures for next generation photonic devices / _c Katarzyna Komolibus. |
| 264 | 1 |
_aCork : _bCork Institute of Technology, _c2016. |
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| 300 |
_ax, 116 pages : _bcolor illustrations, graphs ; _c30 cm |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_aunmediated _bn _2rdamedia |
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| 338 |
_avolume _bnc _2rdacarrier |
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| 490 | 0 | _aPh.D - Physical Sciences | |
| 502 | _aThesis (Ph.D.) - Cork Institute of Technology, 2016. | ||
| 504 | _aIncludes bibliographical references. | ||
| 520 | _a"A majority of modern day applications, ranging from telecommunications, charge storage memories and solar cells to more recently silicon photonics, have at their core compound semiconductor based optoelectronic devices. Particular attention has focused on the use of Group-III and Group V elements in these devices and thus drives a desire for improved understanding. This thesis therefore studies a variety of novel III-V nanostructures, which have shown immense promise for inclusion in next-generation photonic devices, examining in detail these structures in terms of their optical properties and inherent carrier dynamics. In this work, band structure tailored quantum dot and dash systems were studied with particular consideration of dynamical processes influencing device performance. In the case of GaSb/GaAs quantum dots, for example, in-depth experimental analysis has demonstrated a carrier transport mechanism unique to their type-II nature. Furthermore, monolithic integration of III-V on Si is of great interest in the development of all-optical interconnects on a Si platform. The optical properties of In-GaAs/GaAs core-shell nanopillars, high aspect radio nanostructures proposed as an attractive Si-integrable technology, were studied as a function of their geometry, compositon and shell material. Optimisation of these parameters has led to efficient silicon transparent emission at room temperature, demonstrating potential for further development of Si based emitters". - (Author's abstract) | ||
| 650 | 0 |
_aSemiconductors. _942310 |
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| 650 | 0 |
_aOptoelectronic devices. _940626 |
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| 650 | 0 |
_aNanostructures _xOptical properties. |
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| 650 | 0 |
_aPhotonics _xMaterials. |
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| 650 | 0 |
_aPhoton emission. _9119235 |
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| 650 | 0 |
_aQuantum dots. _945985 |
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| 907 |
_a.b11211507 _b161007 _c161007 |
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| 942 | _n0 | ||
| 998 |
_ac _b161007 _cm _da _e- _feng _gie _h0 |
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| 999 |
_c106412 _d106412 |
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