MTU Cork Library Catalogue

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Secondary ion mass spectrometry : principles and applications / edited by John C. Vickerman, Alan Brown, and Nicola M. Reed.

Contributor(s): Vickerman, J. C | Brown, A. Alan | Reed, Nicola M.
Material type: materialTypeLabelBookSeries: Oxford science publications.International series of monographs on chemistry: 17.Publisher: Oxford : New York : Clarendon Press ; Oxford University Press, 1989Description: xii, 341 p., [4] p. of plates : ill. (some col.) ; 24 cm. + hbk.ISBN: 019855625X .Subject(s): Secondary ion mass spectrometryDDC classification: 543.0873
Contents:
Introducing secondary ion mass spectrometry / John C. Vickerman -- The SIMS phenomenon - the experimental parameters / John C. Vickerman -- SIMS - the theoretical models / John C. Vickerman -- SIMS instrumentation / A.J. Eccles -- SIMS depth profiling of semiconductors / D.S. McPhail -- The appliction of static SIMS in surface science / John C. Vickerman -- Static SIMS for applied surface analysis / Nicola M. Reed -- SIMS imaging / P. Humphrey -- SIMS-related techniques / John C. Vickerman.
Holdings
Item type Current library Call number Copy number Status Date due Barcode Item holds
General Lending MTU Bishopstown Library Lending 543.0873 (Browse shelf(Opens below)) 1 Available 00155759
Total holds: 0

Enhanced descriptions from Syndetics:

This book provides an overview of the phenomenology, technology and application of secondary ion mass spectrometry as a technique for materials analysis. This approach is developing into one of the most effective methods of characterizing the composition and chemical state of the surface and sub-surface layers of solid materials. The first three chapters introduce the basic physical and chemical principles involved and the theories which have been proposed to explain the process. Subsequent chapters describe the instrumental components of the SIMS apparatus, the use of SIMS as an analytical tool, and the development of the techniques of sputtered neutral mass spectrometry and laser microprobe and plasma desorption mass spectrometry. Many practical examples are featured to illustrate the application of SIMS to real problems, possible pitfalls are pointed out, and data of use to analysts are collected in appendices. The book is a practical guide suitable for scientists in all fields who wish to use this valuable analytical technique.

Includes bibliographical references and index.

Introducing secondary ion mass spectrometry / John C. Vickerman -- The SIMS phenomenon - the experimental parameters / John C. Vickerman -- SIMS - the theoretical models / John C. Vickerman -- SIMS instrumentation / A.J. Eccles -- SIMS depth profiling of semiconductors / D.S. McPhail -- The appliction of static SIMS in surface science / John C. Vickerman -- Static SIMS for applied surface analysis / Nicola M. Reed -- SIMS imaging / P. Humphrey -- SIMS-related techniques / John C. Vickerman.

Table of contents provided by Syndetics

  • 1 Introduction Secondary Ion Mass Spectrometry
  • 2 The SIMS Phenomenon--The Experimental Parameters
  • 3 SIMS--The Theoretical Models
  • 4 SIMS Instrumentation
  • 5 SIMS Depth Profiling of Semiconductors
  • 6 The Application of Static SIMS in Surface Science
  • 7 Static SIMS for Applied Surface Analysis
  • 8 SIMS Imaging
  • 9 SIMS-Related Techniques

Reviews provided by Syndetics

CHOICE Review

Edited books on specialized topics often take the form of a series of unrelated chapters, each written by a different author. This book is a successful exception because editor Vickerman has written five of the nine chapters. This is an introductory work; what it lacks in exhaustive detail is compensated for by clarity of presentation. Especially well done are the second and third chapters, which consist of a general description of the phenomenon of secondary ion mass spectroscopy (SIMS) and a presentation of the theoretical models used for its explanation. Less satisfactory is the chapter on experimental techniques. The remainder of the book collects examples of the application of SIMS to a variety of analytical problems in semiconductors, surfaces, chemical structure, catalysis, and imaging. SIMS-related techniques are taken up in the last chapter. The appendixes are useful and well constructed. It would have been helpful if there were cumulative author, topic, and compound indexes rather than the lists of references that appear at chapter ends. The book is quite suitable for undergraduate as well as graduate libraries, and is to be preferred to the much more specialized Sececondary Ion Mass Spectrometry (SIMS conference proceedings), published by Springer, as an introduction to the subject. -M. Coplan, University of Maryland at College Park

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