Sensor technology and devices / edited by Ljubisa Ristic.
Contributor(s): Ristić, Ljubiša.
Material type: BookPublisher: Boston : Artech House, 1994Description: xiv, 524 p. : ill. ; 24 cm.ISBN: 0890065322.Subject(s): Interface circuits | Detectors -- Design and construction | SemiconductorsDDC classification: 681.2Item type | Current library | Call number | Copy number | Status | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
General Lending | MTU Bishopstown Library Lending | 681.2 (Browse shelf(Opens below)) | 1 | Available | 00013987 | ||
General Lending | MTU Bishopstown Library Store Item | 681.2 (Browse shelf(Opens below)) | 1 | Available | 00070442 |
Enhanced descriptions from Syndetics:
"A results-oriented book. Quality line drawings, lucid photography, and informative graphs are used generously... The theoretical rigor of each chapter amply supports the real-world design examples that follow". -- Sensors Magazine
"One of the few sources to offer such comprehensive coverage". -- IEEE Electrical Insulation
Includes bibliographical references and index.
Sensing the real world -- Modeling and simulation of microsensors and actuators -- Bulk micromaching technology -- Surface micromaching technology -- Silicon direct wafer bonding -- Packaging for sensors -- Magnetic field sensors based on lateral magnetotransistors -- Thermal sensors -- Planar silicon photosensors -- Charge coupled devices -- Sensors for the automotive industry -- Signal processing for micromachined sensors -- Controlled oscillators and their applicability to sensors.
Table of contents provided by Syndetics
- Preface (p. xiii)
- Chapter 1 Sensing the Real World
- 1.1 Introduction (p. 1)
- 1.2 Sensor Classification (p. 2)
- 1.3 Sensor Parameters (p. 3)
- 1.4 A Seamless Sensor System (p. 4)
- 1.5 Sensor Industry Growth (p. 6)
- 1.6 Summary (p. 8)
- References (p. 11)
- Chapter 2 Modeling and Simulation of Microsensors and Actuators
- 2.1 Introduction (p. 13)
- 2.2 Modeling Equations (p. 14)
- 2.2.1 The Basic Semiconductor Equations (p. 14)
- 2.2.2 Boundary Conditions (p. 16)
- 2.2.3 Simplification of the Problem (p. 17)
- 2.2.4 Combination of Mechanical and Electrical Effects (p. 18)
- 2.3 Discretization Procedures (p. 20)
- 2.3.1 Accelerated Nonlinear Procedures (p. 21)
- 2.3.2 Methods of Solution and Grid Generation (p. 22)
- 2.3.3 Equation Discretization (p. 26)
- 2.3.4 Error Checking (p. 29)
- 2.4 Results and Discussion (p. 30)
- 2.4.1 Hall Devices (p. 30)
- 2.4.2 Magnetotransistor (p. 33)
- 2.4.3 Micromachined Flow Sensor (p. 36)
- 2.4.4 Dynamic Microstructures (p. 39)
- 2.5 Summary (p. 43)
- References (p. 43)
- Chapter 3 Bulk Micromachining Technology
- 3.1 Introduction (p. 49)
- 3.2 Basic Concept of Bulk Micromachining (p. 50)
- 3.2.1 Silicon as a Mechanical Material (p. 50)
- 3.2.2 Wet Anisotropic Etching (p. 51)
- 3.2.3 Anisotropic Etchants (p. 59)
- 3.2.4 Etch-Stop Mechanisms (p. 69)
- 3.3 CMOS Technology and Bulk Micromachining (p. 76)
- 3.3.1 CMOS Processing (p. 76)
- 3.3.2 Micromechanical Structures in CMOS Processing (p. 77)
- 3.4 Applications of Bulk Micromachining (p. 82)
- 3.4.1 Bulk Micromachined Accelerometer (p. 82)
- 3.4.2 Thermal Infrared Sensor (p. 84)
- 3.4.3 Inductors in CMOS Technology (p. 86)
- 3.5 Summary (p. 89)
- References (p. 90)
- Chapter 4 Surface Micromachining Technology
- 4.1 Introduction (p. 95)
- 4.2 Basic Concept of Surface Micromachining Technology (p. 96)
- 4.2.1 Layer Stacking (p. 96)
- 4.2.2 Sealing (p. 98)
- 4.3 Polysilicon for Surface Micromachining (p. 99)
- 4.3.1 Deposition of Polysilicon (p. 100)
- 4.3.2 As-Deposited Film Stress (p. 105)
- 4.3.3 Annealing of Undoped Films (p. 107)
- 4.3.4 In-Situ Doping (p. 108)
- 4.3.5 Ex-Situ Doping (p. 115)
- 4.3.6 Sacrificial Layers and Sacrificial Etching (p. 118)
- 4.3.7 Stiction (p. 124)
- 4.4 Mechanical Characterization of Polysilicon (p. 126)
- 4.4.1 Test Structures for In-Situ Characterization (p. 126)
- 4.4.2 Gradient of Residual Stress (p. 130)
- 4.4.3 Load-Response Characterization (p. 133)
- 4.5 Application of Surface Micromachining (p. 140)
- 4.5.1 Surface Micromachined Accelerometer (p. 140)
- 4.5.2 Electrostatically Driven Resonators (p. 143)
- 4.5.3 Integration of Surface Micromachined Structures--Processing Issues (p. 144)
- 4.6 LIGA Process (p. 146)
- 4.7 Summary (p. 149)
- References (p. 150)
- Chapter 5 Silicon Direct Wafer Bonding
- 5.1 Introduction (p. 157)
- 5.2 Mechanism of Direct Wafer Bonding (p. 159)
- 5.2.1 SiO[subscript 2]//SiO[subscript 2] Bonding (p. 160)
- 5.2.2 Si//Si Bonding (p. 164)
- 5.3 Processing Considerations (p. 168)
- 5.3.1 Interface Integrity (p. 168)
- 5.3.2 Bond Strength (p. 178)
- 5.3.3 Shaping Bonded Wafers (p. 180)
- 5.3.4 Microdefects in Bonded Wafers (p. 186)
- 5.4 Application of Direct Wafer Bonding to Sensors and Actuators (p. 192)
- 5.4.1 Threshold Pressure Switch (p. 192)
- 5.4.2 Pressure Sensor (p. 195)
- 5.4.3 Peristaltic Membrane Pump (p. 198)
- 5.5 Summary (p. 199)
- References (p. 199)
- Chapter 6 Packaging for Sensors
- 6.1 Introduction (p. 203)
- 6.2 Basic Considerations for Sensor Packaging (p. 204)
- 6.3 Wafer-Level Packaging (p. 207)
- 6.3.1 Glass-Sealed Technique (p. 208)
- 6.3.2 Anodic Bonding (p. 210)
- 6.4 Assembly Techniques (p. 212)
- 6.4.1 Die Bonding (p. 212)
- 6.4.2 Wire Bonding (p. 217)
- 6.4.3 Chip Coatings (p. 219)
- 6.4.4 Package Types (p. 220)
- 6.5 Packaging for Specific Applications (p. 227)
- 6.5.1 Pressure Sensor Packaging (p. 227)
- 6.5.2 Accelerometer Packaging (p. 235)
- 6.6 Summary (p. 237)
- References (p. 237)
- Chapter 7 Magnetic Field Sensors Based on Lateral Magnetotransistors
- 7.1 Introduction (p. 239)
- 7.2 Lateral Magnetotransistors (p. 240)
- 7.2.1 Combined Action of an Electric Field and a Magnetic Field (p. 241)
- 7.2.2 Lateral Magnetotransistor in CMOS Technology (p. 242)
- 7.2.3 Suppressed Sidewall Injection Magnetotransistor in CMOS Technology (p. 243)
- 7.2.4 Suppressed Sidewall Injection Magnetotransistor in Bipolar Technology (p. 255)
- 7.2.5 Offset in Magnetotransistors (p. 258)
- 7.2.6 Noise in Magnetotransistors (p. 260)
- 7.2.7 Surface Effects (p. 268)
- 7.3 Multidimensional Sensing (p. 270)
- 7.3.1 Lateral Magnetotransistor Sensitive to Magnetic Field Either Parallel or Perpendicular to the Chip Surface (p. 271)
- 7.3.2 Two-Dimensional Sensing (p. 273)
- 7.3.3 Three-Dimensional Sensing (p. 277)
- 7.4 Summary (p. 282)
- References (p. 282)
- Chapter 8 Thermal Sensors
- 8.1 Introduction (p. 287)
- 8.2 Bipolar Devices as Temperature Sensors (p. 288)
- 8.2.1 Diodes as Temperature Sensors (p. 289)
- 8.2.2 Bipolar Transistors as Temperature Sensors (p. 290)
- 8.2.3 Stability (p. 294)
- 8.3 Integrated Temperature Sensors in Bipolar Technology (p. 294)
- 8.4 Intrinsically Referenced Temperature Sensors (p. 300)
- 8.5 Temperature Sensors in CMOS Technology (p. 302)
- 8.5.1 Bipolar Transistors in CMOS Technology (p. 302)
- 8.5.2 Integrated Temperature Sensors in CMOS Technology Based on Bipolar Transistors (p. 304)
- 8.5.3 Temperature Sensors Based on MOS Transistors and Resistors (p. 307)
- 8.5.4 Temperature Sensors with Digital Output (p. 309)
- 8.6 Polysilicon Resistors (p. 311)
- 8.7 Summary (p. 313)
- References (p. 313)
- Chapter 9 Planar Silicon Photosensors
- 9.1 Introduction (p. 317)
- 9.2 Planar Silicon Photodiodes (p. 320)
- 9.3 Fundamentals of Photosensors (p. 322)
- 9.3.1 Material Properties (p. 322)
- 9.3.2 Quantum Efficiency (p. 326)
- 9.3.3 Collection Efficiency Models (p. 327)
- 9.3.4 Photocurrent (p. 330)
- 9.3.5 Noise Current (p. 331)
- 9.3.6 Response Time (p. 333)
- 9.4 Level of Integration (p. 334)
- 9.5 Summary (p. 337)
- References (p. 338)
- Chapter 10 Charge Coupled Devices
- 10.1 Introduction (p. 341)
- 10.2 Basic Concepts (p. 342)
- 10.2.1 CCD Charge Storage Fundamentals (p. 342)
- 10.2.2 CCD Architectures (p. 343)
- 10.2.3 Three-Phase CCD Example (p. 344)
- 10.3 Quantum Efficiency (p. 347)
- 10.3.1 QE Model (p. 348)
- 10.3.2 Quantum Yield and Photon Transfer Curve (p. 348)
- 10.3.3 Backside Illumination and Thinning (p. 350)
- 10.3.4 Details of Flashgate Theory (p. 352)
- 10.3.5 Thinning Technology and Backside Performance (p. 357)
- 10.3.6 Alternative Approaches for High QE (p. 358)
- 10.4 Charge Collection Efficiency (p. 360)
- 10.5 Charge Transfer Efficiency (p. 366)
- 10.6 Read Noise (p. 369)
- 10.7 Summary (p. 373)
- Acknowledgments (p. 374)
- References (p. 374)
- Chapter 11 Sensors for the Automotive Industry (p. 377)
- 11.1 Introduction (p. 384)
- 11.2 Sensing Technology in Vehicle Systems (p. 384)
- 11.2.1 Manifold Absolute Pressure (p. 386)
- 11.2.2 Tire Pressure Sensor (p. 390)
- 11.2.3 Position, Rotation, and Speed Sensing (p. 391)
- 11.2.4 Flow (p. 399)
- 11.2.5 Accelerometers (p. 401)
- 11.3 Future Automotive Sensing (p. 407)
- 11.3.1 High-Temperature Operation (p. 407)
- 11.3.2 Liquid Level (p. 407)
- 11.3.3 Chemical Sensing (p. 408)
- 11.3.4 Oil Quality (p. 410)
- 11.3.5 Capability to Compute Rather than Sense (p. 410)
- 11.3.6 Vehicle Diagnostics (p. 412)
- 11.3.7 RF Sensor Applications (p. 413)
- 11.3.8 Future Sensor Requirements (p. 414)
- 11.4 Summary (p. 417)
- References (p. 418)
- Chapter 12 Signal Processing for Micromachined Sensors
- 12.1 Introduction (p. 421)
- 12.2 Sensing Methods (p. 421)
- 12.2.1 Piezoelectric Sensing (p. 422)
- 12.2.2 Piezoresistive Sensing (p. 424)
- 12.2.3 Capacitive Sensing (p. 428)
- 12.3 Open- and Closed-Loop Systems (p. 433)
- 12.3.1 Different Micromachined Structures--Mechanical Issues (p. 433)
- 12.3.2 Open-Loop Capacitive Sensing (p. 438)
- 12.3.3 Closed-Loop Capacitive Sensing (p. 440)
- 12.4 Integration (p. 446)
- 12.4.1 Integrated Pressure Sensor (p. 446)
- 12.4.2 Integrated Accelerometer (p. 446)
- 12.4.3 Dynamic Considerations (p. 448)
- 12.4.4 Shock Considerations (p. 450)
- 12.4.5 Self-Test Features (p. 452)
- 12.4.6 Testing and Trimming (p. 453)
- 12.5 Summary (p. 455)
- References (p. 455)
- Chapter 13 Controlled Oscillators and Their Applicability to Sensors
- 13.1 Introduction (p. 457)
- 13.2 Controlled Sinusoidal Oscillators (p. 458)
- 13.2.1 The Oscillator Circuit and Its Control Characteristics (p. 458)
- 13.2.2 Oscillator Amplitude and Frequency Transients (p. 461)
- 13.2.3 Interaction of the Frequency and Amplitude Controls (p. 463)
- 13.2.4 Sinusoidal Oscillators in Applications (p. 466)
- 13.3 Controlled Multivibrators (p. 467)
- 13.3.1 Multivibrators versus Sinusoidal Oscillators (p. 467)
- 13.3.2 Multivibrators with Operational Amplifiers (p. 468)
- 13.3.3 Switches in the Basic Multivibrator Circuits (p. 471)
- 13.3.4 One-Amplifier Multivibrator (p. 476)
- 13.3.5 Voltage-to-Frequency Converters (p. 479)
- 13.3.6 Current-to-Frequency Converters (p. 484)
- 13.3.7 Duty-Cycle Modulation (p. 504)
- 13.3.8 Controlled Multivibrators in Applications (p. 507)
- 13.4 Summary (p. 507)
- References (p. 508)
- About the Authors (p. 511)
- Index (p. 517)