Fundamentals of semiconductors : physics and materials properties / Peter Y. Yu and Manuel Cardona.

By: Yu, Peter Y, 1944-.

Contributor(s): Cardona, Manuel, 1934-.

Material type: materialTypeLabel

BookPublisher: Berlin : Springer, 1996Edition: 1st ed. / corr. print.Description: xiv, 617 p. : ill. (some col.) ; 24 cm. + pbk.ISBN: 3540614613.Subject(s): Semiconductors

| Semiconductors -- Materials

DDC classification: 537.622

Contents:

Introduction -- Electronic band structures -- Vibrational properties of semiconductors and electron phonon interactions -- Electronic properties of defects -- Electrical transport -- Optical properties I -- Optical properties II -- Photoelectron electroscopy -- Effect of quantum confinement on electrons and phonons in semiconductors.

Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode	Item holds
General Lending	MTU Bishopstown Library Lending	537.622 (Browse shelf(Opens below))	1	Available		00074322

Total holds: 0

Bibliography: p. 567-598. - Includes index.

Table of contents provided by Syndetics

1 Introduction
1.1 A Survey of Semiconductors (p. 2)
1.1.1 Elemental Semiconductors (p. 2)
1.1.2 Binary Compounds (p. 2)
1.1.3 Oxides (p. 3)
1.1.4 Layered Semiconductors (p. 3)
1.1.5 Organic Semiconductors (p. 4)
1.1.6 Magnetic Semiconductors (p. 4)
1.1.7 Other Miscellaneous Semiconductors (p. 4)
1.2 Growth Techniques (p. 5)
1.2.1 Czochralski Method (p. 5)
1.2.2 Bridgman Method (p. 6)
1.2.3 Chemical Vapor Deposition (p. 6)
1.2.4 Molecular Beam Epitaxy (p. 7)
1.2.5 Liquid Phase Epitaxy (p. 10)
Summary (p. 11)
2 Electronic Band Structures
2.1 Quantum Mechanics (p. 14)
2.2 Translational Symmetry and Brillouin Zones (p. 16)
2.3 A Pedestrian's Guide to Group Theory (p. 21)
2.3.1 Definitions and Notations (p. 21)
2.3.2 Symmetry Operations of the Diamond and Zinc-Blende Structures (p. 26)
2.3.3 Representations and Character Tables (p. 28)
2.3.4 Some Applications of Character Tables (p. 36)
2.4 Empty Lattice or Nearly Free Electron Energy Bands (p. 43)
2.4.1 Nearly Free Electron Band Structure in a Zinc-Blende Crystal (p. 44)
2.4.2 Nearly Free Electron Energy Bands in Diamond Crystals (p. 48)
2.5 Band Structure Calculation by Pseudopotential Methods (p. 54)
2.5.1 Pseudopotential Form Factors in Zinc-Blende- and Diamond-Type Semiconductors (p. 57)
2.5.2 Empirical and Self-Consistent Pseudopotential Methods (p. 61)
2.6 The k&cdot;p Method of Band-Structure Calculations (p. 63)
2.6.1 Effective Mass of a Nondegenerate Band Using the k&cdot;p Method (p. 64)
2.6.2 Band Dispersion near a Degenerate Extremum: Top Valence Bands in Diamondand Zinc-Blende-Type Semiconductors (p. 67)
2.7 Tight-Binding or LCAO Approach to the Band Structure of Semiconductors (p. 78)
2.7.1 Molecular Orbitals and Overlap Parameters (p. 78)
2.7.2 Band Structure of Group-IV Elements by the Tight-Binding Method (p. 82)
2.7.3 Overlap Parameters and Nearest-Neighbor Distances (p. 89)
Problems (p. 91)
Summary (p. 98)
3 Vibrational Properties of Semiconductors, and Electron-Phonon Interactions
3.1 Phonon Dispersion Curves of Semiconductors (p. 102)
3.2 Models for Calculating Phonon Dispersion Curves of Semiconductors (p. 105)
3.2.1 Force Constant Models (p. 105)
3.2.2 Shell Model (p. 106)
3.2.3 Bond Models (p. 107)
3.2.4 Bond Charge Models (p. 109)
3.3 Electron-Phonon Interactions (p. 113)
3.3.1 Strain Tensor and Deformation Potentials (p. 114)
3.3.2 Electron-Acoustic-Phonon Interaction at Degenerate Bands (p. 119)
3.3.3 Piezoelectric Electron-Acoustic-Phonon Interaction (p. 122)
3.3.4 Electron-Optical-Phonon Deformation Potential Interactions (p. 123)
3.3.5 Frohlich Interaction (p. 125)
3.3.6 Interaction Between Electrons and Large-Wavevector Phonons: Intervalley Electron-Phonon Interaction (p. 127)
Problems (p. 129)
Summary (p. 147)
4 Electronic Properties of Defects
4.1 Classification of Defects (p. 150)
4.2 Shallow or Hydrogenic Impurities (p. 151)
4.2.1 Effective Mass Approximation (p. 152)
4.2.2 Hydrogenic or Shallow Donors (p. 156)
4.2.3 Donors Associated with Anisotropic Conduction Bands (p. 161)
4.2.4 Acceptor Levels in Diamond-and Zinc-Blende-Type Semiconductors (p. 164)
4.3 Deep Centers (p. 170)
4.3.1 Green's Function Method for Calculating Defect Energy Levels (p. 173)
4.3.2 An Application of the Green's Function Method: Linear Combination of Atomic Orbitals (p. 178)
4.3.3 Another Application of the Green's Function Method: Nitrogen in GaP and Ga AsP Alloys (p. 182)
4.3.4 Final Note on Deep Centers (p. 187)
Problems (p. 188)
Summary (p. 192)
5 Electrical Transport
5.1 Quasi-Classical Approach (p. 193)
5.2 Carrier Mobility for a Nondegenerate Electron Gas (p. 196)
5.2.1 Relaxation Time Approximation (p. 196)
5.2.2 Nondegenerate Electron Gas in a Parabolic Band (p. 197)
5.2.3 Dependence of Scattering and Relaxation Times on Electron Energy (p. 198)
5.2.4 Momentum Relaxation Times (p. 199)
5.2.5 Temperature Dependence of Mobilities (p. 210)
5.3 Modulation Doping (p. 213)
5.4 High-Field Transport and Hot Carrier Effects (p. 215)
5.4.1 Velocity Saturation (p. 217)
5.4.2 Negative Differential Resistance (p. 218)
5.4.3 Gunn Effect (p. 220)
5.5 Magneto-Transport and the Hall Effect (p. 222)
5.5.1 Magneto-Conductivity Tensor (p. 222)
5.5.2 Hall Effect (p. 224)
5.5.3 Hall Coefficient for Thin Film Samples (van der Pauw Method) (p. 225)
5.5.4 Hall Effect for a Distribution of Electron Energies (p. 226)
Problems (p. 227)
Summary (p. 231)
6 Optical Properties I
6.1 Macroscopic Electrodynamics (p. 234)
6.1.1 Digression: Units for the Frequency of Electromagnetic Waves (p. 237)
6.1.2 Experimental Determination of Optical Constants (p. 237)
6.1.3 Kramers-Kronig Relations (p. 240)
6.2 The Dielectric Function (p. 243)
6.2.1 Experimental Results (p. 243)
6.2.2 Microscopic Theory of the Dielectric Function (p. 244)
6.2.3 Joint Density of States and Van Hove Singularities (p. 251)
6.2.4 Van Hove Singularities in ϵ i (p. 252)
6.2.5 Direct Absorption Edges (p. 258)
6.2.6 Indirect Absorption Edges (p. 259)
6.2.7 """"Forbidden"""" Direct Absorption Edges (p. 263)
6.3 Excitons (p. 266)
6.3.1 Exciton Effect at M 0 Critical Points (p. 269)
6.3.2 Absorption Spectra of Excitons (p. 272)
6.3.3 Exciton Effect at M 1 Critical Points or Hyperbolic Excitons (p. 278)
6.3.4 Exciton Effect at M 3 Critical Points (p. 281)
6.4 Phonon-Polaritons and Lattice Absorption (p. 282)
6.4.1 Phonon-Polaritons (p. 285)
6.4.2 Lattice Absorption and Reflection (p. 288)
6.4.3 Multiphonon Lattice Absorption (p. 289)
6.4.4 Dynamic Effective Ionic Charges in Heteropolar Semiconductors (p. 293)
6.5 Absorption Associated with Extrinsic Electrons (p. 295)
6.5.1 Free-Carrier Absorption in Doped Semiconductors (p. 296)
6.5.2 Absorption by Carriers Bound to Shallow Donors and Acceptors (p. 301)
6.6 Modulation Spectroscopy (p. 305)
6.6.3 Frequency Modulated Reflectance and Thermoreflectance (p. 309)
6.6.4 Piezoreflectance (p. 311)
6.6.5 Electroreflectance (Franz-Keldysh Effect) (p. 312)
6.6.6 Photoreflectance (p. 319)
6.6.7 Reflectance Difference Spectroscopy (p. 322)
Problems (p. 323)
Summary (p. 331)
7 Optical Properties II
7.1 Emission Spectroscopies (p. 333)
7.1.1 Band-to-Band Transitions (p. 339)
7.1.2 Free-to-Bound Transitions (p. 342)
7.1.3 Donor-Acceptor Pair Transitions (p. 344)
7.1.4 Excitons and Bound Excitons (p. 350)
7.1.5 Luminescence Excitation Spectroscopy (p. 357)
7.2 Light Scattering Spectroscopies (p. 362)
7.2.1 Macroscopic Theory of Inelastic Light Scattering by Phonons (p. 362)
7.2.2 Raman Tensor and Selection Rules (p. 365)
7.2.3 Experimental Determination of Raman Spectra (p. 371)
7.2.4 Microscopic Theory of Raman Scattering (p. 379)
7.2.5 A Detour into the World of Feynman Diagrams (p. 381)
7.2.6 Brillouin Scattering (p. 385)
7.2.7 Experimental Determination of Brillouin Spectra (p. 387)
7.2.8 Resonant Raman and Brillouin Scattering (p. 388)
Problems (p. 409)
Summary (p. 413)
8 Photoelectron Spectroscopy
8.1 Photoemission (p. 419)
8.1.1 Angle-Integrated Photoelectron Spectra of the Valence Bands (p. 428)
8.1.2 Angle-Resolved Photoelectron Spectra of the Valence Bands (p. 431)
8.1.3 Core Levels (p. 439)
8.1 Inverse Photoemission (p. 444)
8.2 Surface Effects (p. 445)
8.3.1 Surface States and Surface Reconstruction (p. 445)
8.3.2 Surface Energy Bands (p. 446)
8.3.3 Fermi Level Pinning and Space Charge Layers (p. 448)
Problems (p. 453)
Summary (p. 455)
9 Effect of Quantum Confinement on Electrons and Phonons in Semiconductors
9.1 Quantum Confinement and Density of States (p. 458)
9.2 Quantum Confinement of Electrons and Holes (p. 461)
9.2.1 Semiconductor Materials for Quantum Wells and Superlattices (p. 462)
9.2.2 Classification of Multiple Quantum Wells and Superlattices (p. 464)
9.2.3 Confinement of Energy Levels of Electrons and Holes (p. 465)
9.2.4 Some Experimental Results (p. 475)
9.3 Phonons in Superlattices (p. 480)
9.3.1 Phonons in Superlattices: Folded Acoustic and Confined Optic Modes (p. 480)
9.3.2 Folded Acoustic Modes: Macroscopic Treatment (p. 485)
9.3.3 Confined Optical Modes: Macroscopic Treatment (p. 486)
9.3.4 Electrostatic Effects in Polar Crystals: Interface Modes (p. 488)
9.4 Raman Spectra of Phonons in Semiconductor Superlattices (p. 497)
9.4.1 Raman Scattering by Folded Acoustic Phonons (p. 497)
9.4.2 Raman Scattering by Confined Optical Phonons (p. 502)
9.4.3 Raman Scattering by Interface Modes (p. 504)
9.4.4 Macroscopic Models of Electron-LO Phonon (Fröhlich) Interaction in Multiple Quantum Wells (p. 507)
9.5 Electrical Transport: Resonant Tunneling (p. 511)
9.5.1 Resonant Tunneling Through a Double-Barrier Quantum Well (p. 512)
9.5.2 I-V Characteristics of Resonant Tunneling Devices (p. 515)
9.6 Quantum Hall Effects in Two-Dimensional Electron Gases (p. 519)
9.6.1 Landau Theory of Diamagnetism in a Three-Dimensional Free Electron Gas (p. 520)
9.6.2 Magneto-Conductivity of a Two-Dimensional Electron Gas: Filling Factor (p. 523)
9.6.3 The Experiment of von Klitzing, Pepper and Dorda (p. 524)
9.6.4 Explanation of the Hall Plateaus in the Integral Quantum Hall Effect (p. 527)
9.7 Concluding Remarks (p. 531)
Problems (p. 532)
Summary (p. 535)
Appendix: Pioneers of Semiconductor Physics Remember
Ultra-Pure Germanium: From Applied to Basic Research or an Old Semiconductor Offering New Opportunities (p. 539)
Two Pseudopotential Methods: Empirical and Ab Initio (p. 542)
The Early Stages of Band-Structures Physics and Its Struggles for a Place in the Sun (p. 544)
Cyclotron Resonance and Structure of Conduction and Valence Band Edges in Silicon and Germanium (p. 547)
Optical Properties of Amorphous Semiconductors and Solar Cells (p. 550)
Optical Spectroscopy of Shallow Impurity Centers (p. 553)
On the Prehistory of Angular Resolved Photoemission (p. 558)
The Discovery and Very Basics of the Quantum Hall Effect (p. 560)
The Birth of the Semiconductor Superlattice (p. 562)
References (p. 567)
Subject Index (p. 601)
Table of Fundamental Physical Constants (Inside Front Cover)
Table of Units (Inside Back Cover)

Reviews provided by Syndetics

CHOICE Review

This excellent graduate-level book on semiconductor physics, by an authority on optical properties and his former student, is a daunting introduction to the subject. A primarily descriptive introduction to growth techniques is followed by a discussion of band structures and their calculations, vibrational properties and electron-phonon interactions, defects and their electronic properties, and electrical transport. Nearly half the work is devoted to optical properties, photoelectron spectroscopy, and the effects of quantum confinement on electrons and phonons. A nice "cultural touch" is a series of reminiscences by nine pioneers in the field about their work and its significance. Diagrams and important equations are clearly highlighted. Most chapters conclude with numerous nontrivial problems to test comprehension. Ample chapter-end references; thorough presentation. For well-prepared graduate students and active researchers. C. A. Hewett Rochester Institute of Technology