The technology and physics of molecular beam epitaxy / 
edited by E.H.C. Parker. 
 - New York :  Plenum Press,  c1985. 
 - xx, 686 p. :  ill. ;  26 cm. 
<br/><br/>Includes bibliographical references and index. 
<br/><br/>Introduction / A. Y. Cho -- III-V MBE growth systems / Graham J. Davies and David Williams -- The growth of the MBE IIII-V compounds and alloys / J. D. Grange -- Dopant incorporation, characteristics and behavior / Colin E. C. Wood -- Properties of III-V layers / M. IIegems -- Compositional superlattices / Leo Esaki -- Modulation-doped AlxGa1-xAs/GaAs heterostructures / H. Morkoc -- Doping superlattices / Gottfried H. Dohler -- MBE of InP and other P-containing compounds / C. R. Stanley, R. F. C. Farrow and P. W. Sullivan --MBE of II-VI compounds / Takafumi Yao -- Silicon molecular beam deposition / Yasuhiro Shiraki -- Metallization by MBE / R. F. C. Farrow -- Insulating layers by MBE / H. C. Casey, Jr. and A. Y. Cho -- III-V microwave devices / J. J. Harris -- Semiconductor lasers and photodetectors / W. T. Tsang -- MBE surface and interface studies / R. Ludeke, R. M. King and E. H. C. Parker -- Comparison and critique of the epitaxial growth technologies / J. D. Grange and D. K. Wickenden -- Retrospect and prospects of MBE / Klaus Ploog. 
<br/><br/><label>ISBN: </label>0306418606 
<br/><br/><label>LCCN: </label>85016702 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Molecular beam epitaxy.<br/>Semiconductors.
<br/><br/><label>Dewey Class. No.: </label>621.38152