Gallium arsenide / 
edited by John S. Blakemore. 
 - New York :  American Institute of Physics,  1987. 
 - 401 p. :  ill. ;  29 cm 
 - Key papers in physics ;  no. 1 .
<br/><br/> Reprints of papers published 1961-1985. 
<br/><br/>Includes bibliographical references and index. 
<br/><br/>Introduction / J. S. Blakemore -- Multitopic reviews -- Mechanical and thermal properties -- Dielectric and optical properties -- Crystalline GaAs bands and gaps -- Gallium arsenide surfaces -- Carrier transport and energy loss -- Impurity and defect phenomena -- Recombination processes. 
<br/><br/><label>ISBN: </label>0883185253  
<br/><br/><label>LCCN: </label>87000932 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Gallium arsenide semiconductors.
<br/><br/><label>Dewey Class. No.: </label>621.38152