MTU Cork Library Catalogue

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Semiconductor physics and devices : basic principles / Donald A. Neamen.

By: Neamen, Donald A.
Material type: materialTypeLabelBookPublisher: Homewood, IL : Irwin, 1992Description: xx, 746 p. : col. ill. ; 24 cm.ISBN: 025608405X.Subject(s): SemiconductorsDDC classification: 537.622
Contents:
The crystal structure of solids -- Introduction to quantum mechanics -- Introduction to the quantum theory of solids -- The semiconductor in equilibrium -- Carrier transport phenomena -- Nonequilibrium excess carriers in semiconductors -- The PN junction -- The PN junction diode -- Metal-semiconductor and semiconductor heterojunctions -- The bipolar transistor -- The junction field-effect transistor -- Fundamentals of the metal-oxide-semiconductor field-effect transistor -- Metal-oxide-semiconductor field-effect transistor: additional concepts -- Optical devices -- Other semiconductor devices.

Enhanced descriptions from Syndetics:

Semiconductor Physics and Devices brings together the fundamental physics, semiconductor material physics, and semiconductor device physics required to understand semiconductor device characteristics, operation, and limitations. It covers the three basic types of transistors (bipolar, JFET, and MOSFET) and includes discussions about processing techniques such as diffusion and ion implantation. The book features important learning tools such as chapter preview sections, chapter summary and review sections, extensive examples, chapter glossaries, many problems, chapter reading lists, and an appendix with answers to selected problems.

Includes bibliographical references and index.

The crystal structure of solids -- Introduction to quantum mechanics -- Introduction to the quantum theory of solids -- The semiconductor in equilibrium -- Carrier transport phenomena -- Nonequilibrium excess carriers in semiconductors -- The PN junction -- The PN junction diode -- Metal-semiconductor and semiconductor heterojunctions -- The bipolar transistor -- The junction field-effect transistor -- Fundamentals of the metal-oxide-semiconductor field-effect transistor -- Metal-oxide-semiconductor field-effect transistor: additional concepts -- Optical devices -- Other semiconductor devices.

Table of contents provided by Syndetics

  • Preface (p. xi)
  • Chapter 1 The Crystal Structure of Solids (p. 1)
  • 1.1 Semiconductor Materials (p. 1)
  • 1.2 Types of Solids (p. 2)
  • 1.3 Space Lattices (p. 3)
  • 1.4 Atomic Bonding (p. 11)
  • 1.5 Imperfections and Impurities in Solids (p. 13)
  • 1.6 Growth of Semiconductor Materials (p. 16)
  • 1.7 Summary (p. 19)
  • Chapter 2 Introduction to Quantum Mechanics (p. 24)
  • 2.1 Principles of Quantum Mechanics (p. 25)
  • 2.2 Schrodinger's Wave Equation (p. 30)
  • 2.3 Applications of Schrodinger's Wave Equation (p. 33)
  • 2.4 Extensions of the Wave Theory to Atoms (p. 45)
  • 2.5 Summary (p. 50)
  • Chapter 3 Introduction to the Quantum Theory of Solids (p. 56)
  • 3.1 Allowed and Forbidden Energy Bands (p. 57)
  • 3.2 Electrical Conduction in Solids (p. 70)
  • 3.3 Extension to Three Dimensions (p. 80)
  • 3.4 Density of States Function (p. 83)
  • 3.5 Statistical Mechanics (p. 88)
  • 3.6 Summary (p. 96)
  • Chapter 4 The Semiconductor in Equilibrium (p. 103)
  • 4.1 Charge Carriers in Semiconductors (p. 104)
  • 4.2 Dopant Atoms and Energy Levels (p. 115)
  • 4.3 The Extrinsic Semiconductor (p. 120)
  • 4.4 Statistics of Donors and Acceptors (p. 128)
  • 4.5 Charge Neutrality (p. 132)
  • 4.6 Position of Fermi Energy Level (p. 139)
  • 4.7 Summary (p. 145)
  • Chapter 5 Carrier Transport Phenomena (p. 154)
  • 5.1 Carrier Drift (p. 154)
  • 5.2 Carrier Diffusion (p. 169)
  • 5.3 Graded Impurity Distribution (p. 173)
  • 5.4 The Hall Effect (p. 177)
  • 5.5 Summary (p. 180)
  • Chapter 6 Nonequilibrium Excess Carriers in Semiconductors (p. 189)
  • 6.1 Carrier Generation and Recombination (p. 190)
  • 6.2 Characteristics of Excess Carriers (p. 194)
  • 6.3 Ambipolar Transport (p. 197)
  • 6.4 Quasi-Fermi Energy Levels (p. 216)
  • 6.5 Excess-Carrier Lifetime (p. 218)
  • 6.6 Surface Effects (p. 224)
  • 6.7 Summary (p. 229)
  • Chapter 7 The pn Junction (p. 238)
  • 7.1 Basic Structure of the pn Junction (p. 238)
  • 7.2 Zero Applied Bias (p. 240)
  • 7.3 Reverse Applied Bias (p. 247)
  • 7.4 Nonuniformly Doped Junctions (p. 255)
  • 7.5 Summary (p. 260)
  • Chapter 8 The pn Junction Diode (p. 268)
  • 8.1 pn Junction Current (p. 269)
  • 8.2 Small-Signal Model of the pn Junction (p. 286)
  • 8.3 Generation-Recombination Currents (p. 297)
  • 8.4 Junction Breakdown (p. 305)
  • 8.5 Charge Storage and Diode Transients (p. 309)
  • 8.6 The Tunnel Diode (p. 313)
  • 8.7 Summary (p. 316)
  • Chapter 9 Metal-Semiconductor and Semiconductor Heterojunctions (p. 326)
  • 9.1 The Schottky Barrier Diode (p. 326)
  • 9.2 Metal-Semiconductor Ohmic Contacts (p. 344)
  • 9.3 Heterojunctions (p. 349)
  • 9.4 Summary (p. 359)
  • Chapter 10 The Bipolar Transistor (p. 367)
  • 10.1 The Bipolar Transistor Action (p. 368)
  • 10.2 Minority Carrier Distribution (p. 377)
  • 10.3 Low-Frequency Common-Base Current Gain (p. 385)
  • 10.4 Nonideal Effects (p. 397)
  • 10.5 Equivalent Circuit Models (p. 413)
  • 10.6 Frequency Limitations (p. 422)
  • 10.7 Large-Signal Switching (p. 427)
  • 10.8 Other Bipolar Transistor Structures (p. 430)
  • 10.9 Summary (p. 435)
  • Chapter 11 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor (p. 449)
  • 11.1 The Two-Terminal MOS Structure (p. 450)
  • 11.2 Capacitance-Voltage Characteristics (p. 474)
  • 11.3 The Basic MOSFET Operation (p. 483)
  • 11.4 Frequency Limitations (p. 502)
  • 11.5 The CMOS Technology (p. 507)
  • 11.6 Summary (p. 509)
  • Chapter 12 Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts (p. 523)
  • 12.1 Nonideal Effects (p. 524)
  • 12.2 MOSFET Scaling (p. 534)
  • 12.3 Threshold Voltage Modifications (p. 537)
  • 12.4 Additional Electrical Characteristics (p. 543)
  • 12.5 Radiation and Hot-Electron Effects (p. 554)
  • 12.6 Summary (p. 561)
  • Chapter 13 The Junction Field-Effect Transistor (p. 570)
  • 13.1 JFET Concepts (p. 571)
  • 13.2 The Device Characteristics (p. 577)
  • 13.3 Nonideal Effects (p. 593)
  • 13.4 Equivalent Circuit and Frequency Limitations (p. 598)
  • 13.5 High Electron Mobility Transistor (p. 602)
  • 13.6 Summary (p. 609)
  • Chapter 14 Optical Devices (p. 617)
  • 14.1 Optical Absorption (p. 618)
  • 14.2 Solar Cells (p. 623)
  • 14.3 Photodetectors (p. 631)
  • 14.4 Photoluminescence and Electroluminescence (p. 642)
  • 14.5 Light Emitting Diodes (p. 647)
  • 14.6 Laser Diodes (p. 653)
  • 14.7 Summary (p. 661)
  • Chapter 15 Semiconductor Power Devices (p. 668)
  • 15.1 Power Bipolar Transistors (p. 668)
  • 15.2 Power MOSFETs (p. 676)
  • 15.3 Heat Sinks and Junction Temperature (p. 683)
  • 15.4 The Thyristor (p. 686)
  • 15.5 Summary (p. 696)
  • Appendix A Selected List of Symbols (p. 703)
  • Appendix B System of Units, Conversion Factors, and General Constants (p. 711)
  • Appendix C The Periodic Table (p. 715)
  • Appendix D The Error Function (p. 717)
  • Appendix E "Derivation" of Schrodinger's Wave Equation (p. 719)
  • Appendix F Unit of Energy--The Electron-Volt (p. 721)
  • Appendix G Answers to Selected Problems (p. 723)
  • Index (p. 731)

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