Enhanced descriptions from Syndetics:

It is a real pleasure to write the Foreword for this book, both because I have known and respected its author for many years and because I expect this book's publication will mark an important milestone in the continuing worldwide development of microsystems. By bringing together all aspects of microsystem design, it can be expected to facilitate the training of not only a new generation of engineers, but perhaps a whole new type of engineer - one capable of addressing the complex range of problems involved in reducing entire systems to the micro- and nano-domains. This book breaks down disciplinary barriers to set the stage for systems we do not even dream of today. Microsystems have a long history, dating back to the earliest days of mic- electronics. While integrated circuits developed in the early 1960s, a number of laboratories worked to use the same technology base to form integrated sensors. The idea was to reduce cost and perhaps put the sensors and circuits together on the same chip. By the late-60s, integrated MOS-photodiode arrays had been developed for visible imaging, and silicon etching was being used to create thin diaphragms that could convert pressure into an electrical signal. By 1970, selective anisotropic etching was being used for diaphragm formation, retaining a thick silicon rim to absorb package-induced stresses. Impurity- and electrochemically-based etch-stops soon emerged, and "bulk micromachining" came into its own.

Table of contents provided by Syndetics

• Foreword (p. xvii)
• Preface (p. xxi)
• Acknowledgments (p. xxv)
• Part I Getting Started
• 1. Introduction (p. 3)
• 1.1 Microsystems vs. MEMS (p. 3)
• 1.1.1 What are they? (p. 3)
• 1.1.2 How are they made? (p. 5)
• 1.1.3 What are they made of? (p. 6)
• 1.1.4 How are they designed? (p. 7)
• 1.2 Markets for Microsystems and MEMS (p. 8)
• 1.3 Case Studies (p. 9)
• 1.4 Looking Ahead (p. 12)
• 2. An Approach to MEMS Design (p. 15)
• 2.1 Design: The Big Picture (p. 15)
• 2.1.1 Device Categories (p. 15)
• 2.1.2 High-Level Design Issues (p. 16)
• 2.1.3 The Design Process (p. 17)
• 2.2 Modeling Levels (p. 19)
• 2.2.1 Analytical or Numerical? (p. 21)
• 2.2.2 A Closer Look (p. 22)
• 2.3 Example: A Position-Control System (p. 24)
• 2.4 Going Forward From Here (p. 26)
• 3. Microfabrication (p. 29)
• 3.1 Overview (p. 29)
• 3.2 Wafer-Level Processes (p. 30)
• 3.2.1 Substrates (p. 30)
• 3.2.2 Wafer Cleaning (p. 34)
• 3.2.3 Oxidation of Silicon (p. 34)
• 3.2.4 Local Oxidation (p. 37)
• 3.2.5 Doping (p. 38)
• 3.2.6 Thin-Film Deposition (p. 42)
• 3.2.7 Wafer Bonding (p. 47)
• 3.3 Pattern Transfer (p. 50)
• 3.3.1 Optical Lithography (p. 50)
• 3.3.2 Design Rules (p. 54)
• 3.3.3 Mask Making (p. 55)
• 3.3.4 Wet Etching (p. 57)
• 3.3.5 Dry Etching (p. 67)
• 3.3.6 Additive Processes: Lift-Off (p. 71)
• 3.3.7 Planarization (p. 74)
• 3.4 Conclusion (p. 77)
• 4. Process Integration (p. 79)
• 4.1 Developing a Process (p. 79)
• 4.1.1 A Simple Process Flow (p. 79)
• 4.1.2 The Self-Aligned Gate: A Paradigm-Shifting Process (p. 83)
• 4.2 Basic Principles of Process Design (p. 85)
• 4.2.1 From Shape to Process and Back Again (p. 85)
• 4.2.2 Process Design Issues (p. 86)
• 4.3 Sample Process Flows (p. 91)
• 4.3.1 A Bulk-Micromachined Diaphragm Pressure Sensor (p. 92)
• 4.3.2 A Surface-Micromachined Suspended Filament (p. 97)
• 4.4 Moving On (p. 98)
• Part II Modeling Strategies
• 5. Lumped Modeling (p. 103)
• 5.1 Introduction (p. 103)
• 5.2 Conjugate Power Variables (p. 104)
• 5.3 One-Port Elements (p. 106)
• 5.3.1 Ports (p. 106)
• 5.3.2 The Variable-Assignment Conventions (p. 106)
• 5.3.3 One-Port Source Elements (p. 108)
• 5.3.4 One-Port Circuit Elements (p. 109)
• 5.4 Circuit Connections in the e [right arrow] V Convention (p. 114)
• 5.4.1 Kirchhoff's Laws (p. 114)
• 5.5 Formulation of Dynamic Equations (p. 116)
• 5.5.1 Complex Impedances (p. 116)
• 5.5.2 State Equations (p. 117)
• 5.6 Transformers and Gyrators (p. 118)
• 5.6.1 Impedance Transformations (p. 119)
• 5.6.2 The Electrical Inductor (p. 120)
• 6. Energy-Conserving Transducers (p. 125)
• 6.1 Introduction (p. 125)
• 6.2 The Parallel-Plate Capacitor (p. 125)
• 6.2.1 Charging the Capacitor at Fixed Gap (p. 126)
• 6.2.2 Charging the Capacitor at Zero Gap, then Lifting (p. 127)
• 6.3 The Two-Port Capacitor (p. 129)
• 6.4 Electrostatic Actuator (p. 130)
• 6.4.1 Charge Control (p. 131)
• 6.4.2 Voltage Control (p. 132)
• 6.4.3 Pull-In (p. 134)
• 6.4.4 Adding Dynamics to the Actuator Model (p. 137)
• 6.5 The Magnetic Actuator (p. 139)
• 6.6 Equivalent Circuits for Linear Transducers (p. 142)
• 6.7 The Position Control System--Revisited (p. 145)
• 7. Dynamics (p. 149)
• 7.1 Introduction (p. 149)
• 7.2 Linear System Dynamics (p. 150)
• 7.2.1 Direct Integration (p. 151)
• 7.2.2 System Functions (p. 152)
• 7.2.3 Fourier Transform (p. 157)
• 7.2.4 Sinusoidal Steady State (p. 158)
• 7.2.5 Eigenfunction Analysis (p. 160)
• 7.3 Nonlinear Dynamics (p. 164)
• 7.3.1 Fixed Points of Nonlinear Systems (p. 164)
• 7.3.2 Linearization About an Operating Point (p. 165)
• 7.3.3 Linearization of the Electrostatic Actuator (p. 166)
• 7.3.4 Transducer Model for the Linearized Actuator (p. 169)
• 7.3.5 Direct Integration of State Equations (p. 173)
• 7.3.6 Resonators and Oscillators (p. 178)
• 7.3.7 And Then There's Chaos... (p. 178)
• Part III Domain-Specific Details
• 8. Elasticity (p. 183)
• 8.1 Introduction (p. 183)
• 8.2 Constitutive Equations of Linear Elasticity (p. 184)
• 8.2.1 Stress (p. 184)
• 8.2.2 Strain (p. 185)
• 8.2.3 Elastic Constants for Isotropic Materials (p. 186)
• 8.2.4 Other Elastic Constants (p. 188)
• 8.2.5 Isotropic Elasticity in Three Dimensions (p. 189)
• 8.2.6 Plane Stress (p. 190)
• 8.2.7 Elastic Constants for Anisotropic Materials (p. 191)
• 8.3 Thermal Expansion and Thin-Film Stress (p. 193)
• 8.3.1 Other Sources of Residual Thin-Film Stress (p. 195)
• 8.4 Selected Mechanical Property Data (p. 196)
• 8.5 Material Behavior at Large Strains (p. 196)
• 8.5.1 Plastic Deformation (p. 197)
• 9. Structures (p. 201)
• 9.1 Overview (p. 201)
• 9.2 Axially Loaded Beams (p. 201)
• 9.2.1 Beams With Varying Cross-section (p. 203)
• 9.2.2 Statically Indeterminate Beams (p. 203)
• 9.2.3 Stresses on Inclined Sections (p. 205)
• 9.3 Bending of Beams (p. 207)
• 9.3.1 Types of Support (p. 207)
• 9.3.2 Types of Loads (p. 207)
• 9.3.3 Reaction Forces and Moments (p. 208)
• 9.3.4 Pure Bending of a Transversely Loaded Beam (p. 211)
• 9.3.5 Differential Equation for Beam Bending (p. 213)
• 9.3.6 Elementary Solutions of the Beam Equation (p. 216)
• 9.4 Anticlastic Curvature (p. 218)
• 9.5 Bending of Plates (p. 219)
• 9.5.1 Plate in Pure Bending (p. 220)
• 9.6 Effects of Residual Stresses and Stress Gradients (p. 222)
• 9.6.1 Stress Gradients in Cantilevers (p. 222)
• 9.6.2 Residual Stresses in Doubly-Supported Beams (p. 226)
• 9.6.3 Buckling of Beams (p. 231)
• 9.7 Plates With In-Plane Stress (p. 235)
• 9.8 What about large deflections? (p. 237)
• 10. Energy Methods (p. 239)
• 10.1 Elastic Energy (p. 240)
• 10.2 The Principle of Virtual Work (p. 243)
• 10.3 Variational Methods (p. 244)
• 10.3.1 Properties of the Variational Solution (p. 247)
• 10.4 Large Deflections of Elastic Structures (p. 249)
• 10.4.1 A Center-Loaded Doubly-Clamped Beam (p. 249)
• 10.4.2 Combining Variational Results with Simulations (p. 253)
• 10.4.3 The Uniformly Loaded Doubly-Clamped Beam (p. 254)
• 10.4.4 Residual Stress in Clamped Structures (p. 255)
• 10.4.5 Elastic Energy in Plates and Membranes (p. 256)
• 10.4.6 Uniformly Loaded Plates and Membranes (p. 257)
• 10.4.7 Membrane Load-Deflection Behavior (p. 259)
• 10.5 Rayleigh-Ritz Methods (p. 260)
• 10.5.1 Estimating Resonant Frequencies (p. 260)
• 10.5.2 Extracting Lumped-Element Masses (p. 263)
• 11. Dissipation and the Thermal Energy Domain (p. 267)
• 11.1 Dissipation is Everywhere (p. 267)
• 11.2 Electrical Resistance (p. 267)
• 11.3 Charging a Capacitor (p. 269)
• 11.4 Dissipative Processes (p. 271)
• 11.5 The Thermal Energy Domain (p. 272)
• 11.5.1 The Heat-Flow Equation (p. 275)
• 11.5.2 Basic Thermodynamic Ideas (p. 275)
• 11.5.3 Lumped Modeling in the Thermal Domain (p. 277)
• 11.6 Self-Heating of a Resistor (p. 278)
• 11.6.1 Temperature Coefficient of Resistance (p. 279)
• 11.6.2 Current-source drive (p. 279)
• 11.6.3 Voltage-source drive (p. 281)
• 11.6.4 A Self-Heated Silicon Resistor (p. 282)
• 11.7 Other Dissipation Mechanisms (p. 286)
• 11.7.1 Contact Friction (p. 286)
• 11.7.2 Dielectric losses (p. 287)
• 11.7.3 Viscoelastic losses (p. 288)
• 11.7.4 Magnetic Losses (p. 289)
• 11.7.5 Diffusion (p. 290)
• 11.8 Irreversible Thermodynamics: Coupled Flows (p. 291)
• 11.8.1 Thermoelectric Power and Thermocouples (p. 293)
• 11.8.2 Thermoelectric Heating and Cooling (p. 295)
• 11.8.3 Other Coupled-Flow Problems (p. 296)
• 11.9 Modeling Time-Dependent Dissipative Processes (p. 296)
• 12. Lumped Modeling of Dissipative Processes (p. 299)
• 12.1 Overview (p. 299)
• 12.2 The Generalized Heat-Flow Equation (p. 299)
• 12.3 The DC Steady State: The Poisson Equation (p. 300)
• 12.4 Finite-Difference Solution of the Poisson Equation (p. 301)
• 12.4.1 Temperature Distribution in a Self-Heated Resistor (p. 303)
• 12.5 Eigenfunction Solution of the Poisson Equation (p. 305)
• 12.6 Transient Response: Finite-Difference Approach (p. 307)
• 12.7 Transient Response: Eigenfunction Method (p. 307)
• 12.8 One-Dimensional Example (p. 308)
• 12.9 Equivalent Circuit for a Single Mode (p. 309)
• 12.10 Equivalent Circuit Including All Modes (p. 311)
• 13. Fluids (p. 317)
• 13.1 What Makes Fluids Difficult? (p. 317)
• 13.2 Basic Fluid Concepts (p. 318)
• 13.2.1 Viscosity (p. 318)
• 13.2.2 Thermophysical Properties (p. 319)
• 13.2.3 Surface Tension (p. 320)
• 13.2.4 Conservation of Mass (p. 322)
• 13.2.5 Time Rate of Change of Momentum (p. 323)
• 13.2.6 The Navier-Stokes Equation (p. 324)
• 13.2.7 Energy Conservation (p. 324)
• 13.2.8 Reynolds Number and Mach Number (p. 325)
• 13.3 Incompressible Laminar Flow (p. 326)
• 13.3.1 Couette Flow (p. 327)
• 13.3.2 Poiseuille Flow (p. 328)
• 13.3.3 Development Lengths and Boundary Layers (p. 331)
• 13.3.4 Stokes Flow (p. 332)
• 13.4 Squeezed-Film Damping (p. 332)
• 13.4.1 Rigid Parallel-Plate Small-Amplitude Motion (p. 334)
• 13.5 Electrolytes and Electrokinetic Effects (p. 339)
• 13.5.1 Ionic Double Layers (p. 340)
• 13.5.2 Electroosmotic Flow (p. 343)
• 13.5.3 Electrophoresis (p. 344)
• 13.5.4 Diffusion Effects (p. 347)
• 13.5.5 Pressure Effects (p. 348)
• 13.5.6 Mixing (p. 348)
• 13.5.7 Modeling of Electrokinetic Systems (p. 349)
• Part IV Circuit and System Issues
• 14. Electronics (p. 353)
• 14.1 Introduction (p. 353)
• 14.2 Elements of Semiconductor Physics (p. 353)
• 14.2.1 Equilibrium Carrier Concentrations (p. 354)
• 14.2.2 Excess Carriers (p. 355)
• 14.3 The Semiconductor Diode (p. 357)
• 14.4 The Diffused Resistor (p. 363)
• 14.5 The Photodiode (p. 364)
• 14.6 The Bipolar Junction Transistor (p. 365)
• 14.7 The MOSFET (p. 365)
• 14.7.1 Large-Signal Characteristics of the MOSFET (p. 367)
• 14.7.2 MOSFET Capacitances (p. 371)
• 14.7.3 Small-Signal Model of the MOSFET (p. 371)
• 14.8 MOSFET Amplifiers (p. 372)
• 14.8.1 The CMOS Inverter (p. 373)
• 14.8.2 Large-Signal Switching Speed (p. 376)
• 14.8.3 The Linear-Gain Region (p. 379)
• 14.8.4 Other Amplifier Configurations (p. 381)
• 14.9 Operational Amplifiers (p. 381)
• 14.10 Dynamic Effects (p. 383)
• 14.11 Basic Op-Amp Circuits (p. 384)
• 14.11.1 Inverting Amplifier (p. 384)
• 14.11.2 Short Method for Analyzing Op-Amp Circuits (p. 387)
• 14.11.3 Noninverting Amplifier (p. 387)
• 14.11.4 Transimpedance Amplifier (p. 388)
• 14.11.5 Integrator (p. 389)
• 14.11.6 Differentiator (p. 390)
• 14.12 Charge-Measuring Circuits (p. 391)
• 14.12.1 Differential Charge Measurement (p. 391)
• 14.12.2 Switched-Capacitor Circuits (p. 393)
• 15. Feedback Systems (p. 397)
• 15.1 Introduction (p. 397)
• 15.2 Basic Feedback Concepts (p. 397)
• 15.3 Feedback in Linear Systems (p. 398)
• 15.3.1 Feedback Amplifiers (p. 399)
• 15.3.2 Example: The Position Controller (p. 400)
• 15.3.3 PID Control (p. 405)
• 15.3.4 The Effect of Amplifier Bandwidth (p. 407)
• 15.3.5 Phase Margin (p. 408)
• 15.3.6 Noise and Disturbances (p. 409)
• 15.3.7 Stabilization of Unstable Systems (p. 410)
• 15.3.8 Controllability and Observability Revisited (p. 411)
• 15.4 Feedback in Nonlinear Systems (p. 411)
• 15.4.1 Quasi-static Nonlinear Feedback Systems (p. 412)
• 15.5 Resonators and Oscillators (p. 413)
• 15.5.1 Simulink Model (p. 417)
• 15.5.2 The (Almost) Sinusoidal Oscillator (p. 418)
• 15.5.3 Relaxation Oscillation (p. 420)
• 16. Noise (p. 425)
• 16.1 Introduction (p. 425)
• 16.2 The Interference Problem (p. 426)
• 16.2.1 Shields (p. 427)
• 16.2.2 Ground Loops (p. 428)
• 16.2.3 Guards (p. 429)
• 16.3 Characterization of Signals (p. 430)
• 16.3.1 Amplitude-Modulated Signals (p. 431)
• 16.4 Characterization of Random Noise (p. 433)
• 16.4.1 Mean-Square and Root-Mean-Square Noise (p. 434)
• 16.4.2 Addition of Uncorrelated Sources (p. 434)
• 16.4.3 Signal-to-Noise Ratio (p. 435)
• 16.4.4 Spectral Density Function (p. 435)
• 16.4.5 Noise in Linear Systems (p. 436)
• 16.5 Noise Sources (p. 436)
• 16.5.1 Thermal Noise (p. 436)
• 16.5.2 Noise Bandwidth (p. 438)
• 16.5.3 Shot Noise (p. 439)
• 16.5.4 Flicker Noise (p. 440)
• 16.5.5 Amplifier Noise (p. 441)
• 16.6 Example: A Resistance Thermometer (p. 442)
• 16.6.1 Using a DC source (p. 445)
• 16.6.2 Modulation of an AC Carrier (p. 446)
• 16.6.3 Caution: Modulation Does Not Always Work (p. 447)
• 16.7 Drifts (p. 447)
• Part V Case Studies
• 17. Packaging (p. 453)
• 17.1 Introduction to the Case Studies (p. 453)
• 17.2 Packaging, Test, and Calibration (p. 454)
• 17.3 An Approach to Packaging (p. 455)
• 17.4 A Commercial Pressure-Sensor Case Study (p. 459)
• 17.4.1 Device Concept (p. 461)
• 17.4.2 System Partitioning (p. 461)
• 17.4.3 Interfaces (p. 462)
• 17.4.4 Details (p. 463)
• 17.4.5 A Final Comment (p. 467)
• 18. A Piezoresistive Pressure Sensor (p. 469)
• 18.1 Sensing Pressure (p. 469)
• 18.2 Piezoresistance (p. 470)
• 18.2.1 Analytic Formulation in Cubic Materials (p. 471)
• 18.2.2 Longitudinal and Transverse Piezoresistance (p. 472)
• 18.2.3 Piezoresistive Coefficients of Silicon (p. 473)
• 18.2.4 Structural Examples (p. 474)
• 18.2.5 Averaging over Stress and Doping Variations (p. 477)
• 18.2.6 A Numerical Example (p. 480)
• 18.3 The Motorola MAP Sensor (p. 481)
• 18.3.1 Process Flow (p. 481)
• 18.3.2 Details of the Diaphragm and Piezoresistor (p. 483)
• 18.3.3 Stress Analysis (p. 485)
• 18.3.4 Signal-Conditioning and Calibration (p. 488)
• 18.3.5 Device Noise (p. 492)
• 18.3.6 Recent Design Changes (p. 493)
• 18.3.7 Higher-Order Effects (p. 494)
• 19. A Capacitive Accelerometer (p. 497)
• 19.1 Introduction (p. 497)
• 19.2 Fundamentals of Quasi-Static Accelerometers (p. 498)
• 19.3 Position Measurement With Capacitance (p. 500)
• 19.3.1 Circuits for Capacitance Measurement (p. 502)
• 19.3.2 Demodulation Methods (p. 507)
• 19.3.3 Chopper-Stabilized Amplifiers (p. 510)
• 19.3.4 Correlated Double Sampling (p. 511)
• 19.3.5 Signal-to-Noise Issues (p. 512)
• 19.4 A Capacitive Accelerometer Case Study (p. 513)
• 19.4.1 Specifications (p. 516)
• 19.4.2 Sensor Design and Modeling (p. 518)
• 19.4.3 Fabrication and Packaging (p. 520)
• 19.4.4 Noise and Accuracy (p. 523)
• 19.5 Position Measurement With Tunneling Tips (p. 525)
• 20. Electrostatic Projection Displays (p. 531)
• 20.1 Introduction (p. 531)
• 20.2 Electromechanics of the DMD Device (p. 536)
• 20.2.1 Electrode Structure (p. 536)
• 20.2.2 Torsional Pull-in (p. 537)
• 20.3 Electromechanics of Electrostatically Actuated Beams (p. 541)
• 20.3.1 M-Test (p. 544)
• 20.4 The Grating-Light-Valve Display (p. 544)
• 20.4.1 Diffraction Theory (p. 544)
• 20.4.2 Device Fabrication and Packaging (p. 548)
• 20.4.3 Quantitative Estimates of GLV Device Performance (p. 550)
• 20.5 A Comparison (p. 558)
• 21. A Piezoelectric Rate Gyroscope (p. 561)
• 21.1 Introduction (p. 561)
• 21.2 Kinematics of Rotation (p. 561)
• 21.3 The Coriolis Rate Gyroscope (p. 563)
• 21.3.1 Sinusoidal Response Function (p. 565)
• 21.3.2 Steady Rotation (p. 566)
• 21.3.3 Response to Angular Accelerations (p. 567)
• 21.3.4 Generalized Gyroscopic Modes (p. 567)
• 21.4 Piezoelectricity (p. 570)
• 21.4.1 The Origin of Piezoelectricity (p. 570)
• 21.4.2 Analytical Formulation of Piezoelectricity (p. 571)
• 21.4.3 Piezoelectric Materials (p. 573)
• 21.4.4 Piezoelectric Actuation (p. 575)
• 21.4.5 Sensing with Piezoelectricity (p. 577)
• 21.5 A Quartz Rate Gyroscope Case Study (p. 578)
• 21.5.1 Electrode Structures (p. 579)
• 21.5.2 Lumped-Element Modeling of Piezoelectric Devices (p. 582)
• 21.5.3 QRS Specifications and Performance (p. 592)
• 21.5.4 A Quantitative Device Model (p. 594)
• 21.5.5 The Drive Mode (p. 595)
• 21.5.6 Sense-Mode Displacement of the Drive Tines (p. 598)
• 21.5.7 Coupling to the Sense Tines (p. 599)
• 21.5.8 Noise and Accuracy Considerations (p. 602)
• 21.5.9 Closing Comments (p. 602)
• 22. Dna Amplification (p. 605)
• 22.1 Introduction (p. 605)
• 22.2 Polymerase Chain Reaction (PCR) (p. 606)
• 22.2.1 Elements of PCR (p. 606)
• 22.2.2 Specifications for a PCR System (p. 610)
• 22.3 Microsystem Approaches to PCR (p. 611)
• 22.3.1 Batch System (p. 611)
• 22.3.2 PCR Flow System (p. 614)
• 22.4 Thermal Model of the Batch Reactor (p. 616)
• 22.4.1 Control Circuit and Transient Behavior (p. 618)
• 22.5 Thermal Model of the Continuous Flow Reactor (p. 621)
• 22.6 A Comparison (p. 625)
• 23. A Microbridge Gas Sensor (p. 629)
• 23.1 Overview (p. 629)
• 23.2 System-Level Issues (p. 630)
• 23.3 First-Order Device and System Models (p. 632)
• 23.3.1 Filament Characteristics (p. 632)
• 23.3.2 Resistance-Control System (p. 634)
• 23.4 A Practical Device and Fabrication Process (p. 639)
• 23.4.1 Creating the Filament (p. 639)
• 23.4.2 High-Temperature Bond Pads (p. 641)
• 23.4.3 Catalyst Coating (p. 642)
• 23.5 Sensor Performance (p. 643)
• 23.5.1 Demonstration of Hydrogen Detection (p. 643)
• 23.5.2 Mass-Transport-Limited Operation (p. 644)
• 23.5.3 Reaction-Rate-Limited Operation (p. 645)
• 23.6 Advanced Modeling (p. 646)
• 23.7 Epilogue (p. 648)
• Appendices (p. 650)
• A Glossary of Notation (p. 651)
• B Electromagnetic Fields (p. 657)
• B.1 Introduction (p. 657)
• B.2 Quasistatic Fields (p. 657)
• B.3 Elementary Laws (p. 657)
• B.4 Electroquasistatic Systems (p. 658)
• B.5 Magnetoquasistatic Systems (p. 659)
• C Elastic Constants in Cubic Material (p. 663)
• References (p. 665)
• Index (p. 677)