MTU Cork Library Catalogue

High dielectric constant materials : (Record no. 48058)

MARC details
000 -LEADER
fixed length control field 03696cam a22003615a 4500
001 - CONTROL NUMBER
control field ocm13563275
003 - CONTROL NUMBER IDENTIFIER
control field IE-CoIT
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20190312112045.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 040419s2004 nyu 000 0 eng
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2004105869
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 3540210814
029 ## - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier T36006
035 ## - SYSTEM CONTROL NUMBER
System control number (DLC) 2004105869
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Transcribing agency DLC
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815284
245 00 - TITLE STATEMENT
Title High dielectric constant materials :
Remainder of title VLSI MOSFET applications /
Statement of responsibility, etc. edited by Howard Huff and D.C. Gilmer.
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. New York, NY :
Name of publisher, distributor, etc. Springer-Verlag Berlin Heidelberg,
Date of publication, distribution, etc. 2005.
300 ## - PHYSICAL DESCRIPTION
Extent xxiv, 710 p. :/bill. ;
Dimensions 25 cm. +
Accompanying material hbk.
490 #0 - SERIES STATEMENT
Series statement Springer series in advanced microelectronics ;
Volume/sequential designation 1437-0387
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note The economic implications of Moore's law / G. D. Hutcheson -- Part I: Classical regime for SiO2 -- Brief notes on the history of gate dielectrics in MOS devices / E. Kooi, A. Schmitz -- SiO2 based MOSFETS: Film growth and Si-SiO2 interface properties / E. A. Irene -- Oxide reliability issues / R. Degraeve -- Part II: Transition to silicon oxynitrides -- Gate dielectric scaling to 2.0-1.0nm: SiO2 and silicon oxynitride / S. -H. Lo and Y. Taur -- Optimal scaling methodologies and transistor performances / T. Skotnicki, F. Boeuf -- Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation / H. -H. Tseng -- Part III: Transition to high-k gate dielectrics -- Alternative dielectrics for silicon-based transistors: selection via multiple criteria / J. -P. Maria -- Materials issues for high-k gate dielectric selection and integration / R. M. Wallace, G. D. Wilk -- Designing interface composition and structure in high dielectric constant gate stacks / G. N. Parsons -- Electronic structure of alternative high-k dielectrics / G. Lucovsky, J. L. Whitten -- Physicochemical properties of selected 4d, 5d and rare earth metals in silicon / A. A. Istratov, E. R. Weber -- High-k gate dielectric deposition technologies / J. P. Chang -- Issues in metal gate electrode selection for bulk CMOS devices / V. Misra -- CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials / L. Colombo, A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers -- Characterization and metrology of medium dielectric constant gate dielectric films / A. C. Diebold, W. W. Chism -- Electrical measurement issues for alternative gate stack systems / G. A. Brown -- High-k gate dielectric materials integrated circuit device design issues / Y. -Y. Fan, S. P. Mudanai, W. Chen, L. F. Register, S. K. Banerjee -- Part IV: Future directions for ultimate scaling technology generations -- High-k crystalline gate dielectrics: a research perpective / F. J. Walker, R. A. McKee -- High-k crystalline gate dielectrics: an IC manufacturer's perspective / R. Droopad, K. Eisenbeiser, A. A. Demkov -- Advanced MOS-devices / J. Boker, T. -J. King, J. Hergenrother, J. Bude, D. Muller, T. Skotnicki, S. Monfray, G. Timp.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Microelectronics.
9 (RLIN) 39932
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Integrated circuits
General subdivision Very large scale integration.
9 (RLIN) 38656
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Metal oxide semiconductor field-effect transistors.
9 (RLIN) 39847
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Dielectrics.
9 (RLIN) 36224
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Huff, Howard.
9 (RLIN) 51332
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Gilmer, D. C.
Fuller form of name (David C.)
9 (RLIN) 51333
907 ## - LOCAL DATA ELEMENT G, LDG (RLIN)
a .b10612117
b 140509
c 050505
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Suppress in OPAC 0
Source of classification or shelving scheme Dewey Decimal Classification
960 ## - PHYSICAL LOCATION (RLIN)
Physical location, PLOC (RLIN) c
b 1
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d
e
f
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h
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j 165.15
k b
l d201
m 2005-08-29
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p
q 2005-10-07
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y 0
z .o1002749x
961 ## - LOCAL CODES
a T36006
d 3000060
f Barrett, James
b Order printed 30-08-2005 17:26
l c
m d201
998 ## - LOCAL CONTROL INFORMATION (RLIN)
a c
Operator's initials, OID (RLIN) 050505
Cataloger's initials, CIN (RLIN) m
First Date, FD (RLIN) a
Local -
-- eng
-- nyu
h 0
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Home library Current library Shelving location Date acquired Cost, normal purchase price Total Checkouts Total Renewals Full call number Barcode Date last seen Copy number Cost, replacement price Price effective from Koha item type
    Dewey Decimal Classification   Available for Loan MTU Bishopstown Library MTU Bishopstown Library Lending 07/10/2005 162.97 1 1 621.3815284 00099171 20/11/2017 1 162.97 20/11/2017 General Lending

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