MARC details
000 -LEADER |
fixed length control field |
03696cam a22003615a 4500 |
001 - CONTROL NUMBER |
control field |
ocm13563275 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
IE-CoIT |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20190312112045.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
040419s2004 nyu 000 0 eng |
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER |
LC control number |
2004105869 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
3540210814 |
029 ## - OTHER SYSTEM CONTROL NUMBER (OCLC) |
OCLC library identifier |
T36006 |
035 ## - SYSTEM CONTROL NUMBER |
System control number |
(DLC) 2004105869 |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
DLC |
Transcribing agency |
DLC |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.3815284 |
245 00 - TITLE STATEMENT |
Title |
High dielectric constant materials : |
Remainder of title |
VLSI MOSFET applications / |
Statement of responsibility, etc. |
edited by Howard Huff and D.C. Gilmer. |
260 ## - PUBLICATION, DISTRIBUTION, ETC. |
Place of publication, distribution, etc. |
New York, NY : |
Name of publisher, distributor, etc. |
Springer-Verlag Berlin Heidelberg, |
Date of publication, distribution, etc. |
2005. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
xxiv, 710 p. :/bill. ; |
Dimensions |
25 cm. + |
Accompanying material |
hbk. |
490 #0 - SERIES STATEMENT |
Series statement |
Springer series in advanced microelectronics ; |
Volume/sequential designation |
1437-0387 |
504 ## - BIBLIOGRAPHY, ETC. NOTE |
Bibliography, etc. note |
Includes bibliographical references and index. |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
The economic implications of Moore's law / G. D. Hutcheson -- Part I: Classical regime for SiO2 -- Brief notes on the history of gate dielectrics in MOS devices / E. Kooi, A. Schmitz -- SiO2 based MOSFETS: Film growth and Si-SiO2 interface properties / E. A. Irene -- Oxide reliability issues / R. Degraeve -- Part II: Transition to silicon oxynitrides -- Gate dielectric scaling to 2.0-1.0nm: SiO2 and silicon oxynitride / S. -H. Lo and Y. Taur -- Optimal scaling methodologies and transistor performances / T. Skotnicki, F. Boeuf -- Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation / H. -H. Tseng -- Part III: Transition to high-k gate dielectrics -- Alternative dielectrics for silicon-based transistors: selection via multiple criteria / J. -P. Maria -- Materials issues for high-k gate dielectric selection and integration / R. M. Wallace, G. D. Wilk -- Designing interface composition and structure in high dielectric constant gate stacks / G. N. Parsons -- Electronic structure of alternative high-k dielectrics / G. Lucovsky, J. L. Whitten -- Physicochemical properties of selected 4d, 5d and rare earth metals in silicon / A. A. Istratov, E. R. Weber -- High-k gate dielectric deposition technologies / J. P. Chang -- Issues in metal gate electrode selection for bulk CMOS devices / V. Misra -- CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials / L. Colombo, A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers -- Characterization and metrology of medium dielectric constant gate dielectric films / A. C. Diebold, W. W. Chism -- Electrical measurement issues for alternative gate stack systems / G. A. Brown -- High-k gate dielectric materials integrated circuit device design issues / Y. -Y. Fan, S. P. Mudanai, W. Chen, L. F. Register, S. K. Banerjee -- Part IV: Future directions for ultimate scaling technology generations -- High-k crystalline gate dielectrics: a research perpective / F. J. Walker, R. A. McKee -- High-k crystalline gate dielectrics: an IC manufacturer's perspective / R. Droopad, K. Eisenbeiser, A. A. Demkov -- Advanced MOS-devices / J. Boker, T. -J. King, J. Hergenrother, J. Bude, D. Muller, T. Skotnicki, S. Monfray, G. Timp. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Microelectronics. |
9 (RLIN) |
39932 |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Integrated circuits |
General subdivision |
Very large scale integration. |
9 (RLIN) |
38656 |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Metal oxide semiconductor field-effect transistors. |
9 (RLIN) |
39847 |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Dielectrics. |
9 (RLIN) |
36224 |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Huff, Howard. |
9 (RLIN) |
51332 |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Gilmer, D. C. |
Fuller form of name |
(David C.) |
9 (RLIN) |
51333 |
907 ## - LOCAL DATA ELEMENT G, LDG (RLIN) |
a |
.b10612117 |
b |
140509 |
c |
050505 |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Suppress in OPAC |
0 |
Source of classification or shelving scheme |
Dewey Decimal Classification |
960 ## - PHYSICAL LOCATION (RLIN) |
Physical location, PLOC (RLIN) |
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165.15 |
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l |
d201 |
m |
2005-08-29 |
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2005-10-07 |
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51378 |
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z |
.o1002749x |
961 ## - LOCAL CODES |
a |
T36006 |
d |
3000060 |
f |
Barrett, James |
b |
Order printed 30-08-2005 17:26 |
l |
c |
m |
d201 |
998 ## - LOCAL CONTROL INFORMATION (RLIN) |
a |
c |
Operator's initials, OID (RLIN) |
050505 |
Cataloger's initials, CIN (RLIN) |
m |
First Date, FD (RLIN) |
a |
Local |
- |
-- |
eng |
-- |
nyu |
h |
0 |